Microanalysis of wurtzite - GaN single crystals prepared by d . c . arc discharge

نویسندگان

  • Hongdong Li
  • Haibin Yang
  • Dongmei Li
  • Haiping Sun
  • Guangtian Zou
چکیده

Gallium nitride crystals with definite faces have been fabricated by d.c. arc discharge using gallium and Hz + NH, as starting materials. Transmission electron microscope, selected area diffraction and X-ray diffraction investigation of the as-grown GaN Srystals show thtt the well faceted crystals are single crystalline GaN having a wnrtzite structure with lattice constants a, = 3.18 A and cu = 5.18 A. Both X-ray microanalysis and nano-probe diffraction techniques have been used to determine the composition and microstrnctnre of the samples.

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تاریخ انتشار 2003